2N5655

Obsolete

ON Semiconductor

HIGH VOLTAGE NPN BIPOLAR POWER TRANSISTOR

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-77-09-TO-225 +1

2N5655

Obsolete

ON Semiconductor

HIGH VOLTAGE NPN BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

DocumentsDatasheet Package Drawing-77-09-TO-225 +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N5655

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	10 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	20 W
Supplier Device Package	TO-126
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	250 V

2N5655 Series

High Voltage NPN Bipolar Power Transistor

Part	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Mounting Type	Power - Max [Max]	Supplier Device Package
ON Semiconductor 2N5655	NPN	250 V	500 mA	150 °C	-65 °C	100 µA	10 MHz	30	TO-126-3 TO-225AA	Through Hole	20 W	TO-126
ON Semiconductor 2N5655G	NPN	250 V	500 mA	150 °C	-65 °C	100 µA	10 MHz	30	TO-126-3 TO-225AA	Through Hole	20 W	TO-126

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

2N5655 Series

These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC line relays.