2N5655 Series

High Voltage NPN Bipolar Power Transistor

Catalog

High Voltage NPN Bipolar Power Transistor

Part	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Mounting Type	Power - Max [Max]	Supplier Device Package
ON Semiconductor 2N5655	NPN	250 V	500 mA	150 °C	-65 °C	100 µA	10 MHz	30	TO-126-3 TO-225AA	Through Hole	20 W	TO-126
ON Semiconductor 2N5655G	NPN	250 V	500 mA	150 °C	-65 °C	100 µA	10 MHz	30	TO-126-3 TO-225AA	Through Hole	20 W	TO-126

Catalog

High Voltage NPN Bipolar Power Transistor

Key Features

• Excellent DC Current GainhFE= 30-250 @ IC= 100 mAdc

• Current-Gain - Bandwith Product -fT=10MHz (Min) @ IC= 50 mAdc

• Pb-Free Packages are Available

Description

These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC line relays.