SFP9630

Obsolete

ON Semiconductor

MOSFET P-CH 200V 6.5A TO220-3

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Obsolete

ON Semiconductor

MOSFET P-CH 200V 6.5A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SFP9630

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	965 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	70 W
Rds On (Max) @ Id, Vgs	800 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Power Dissipation (Max)	Technology	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor SFP9630	6.5 A	965 pF	10 V	4 V	-55 °C	150 °C	200 V	TO-220-3	P-Channel	70 W	MOSFET (Metal Oxide)	30 V	Through Hole	800 mOhm	TO-220-3	36 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 200 V 6.5A (Tc) 70W (Tc) Through Hole TO-220-3

Technical documentation and resources