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MOSFET P-CH 200V 6.5A TO220-3
| Part | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Package / Case | FET Type | Power Dissipation (Max) | Technology | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 6.5 A | 965 pF | 10 V | 4 V | -55 °C | 150 °C | 200 V | TO-220-3 | P-Channel | 70 W | MOSFET (Metal Oxide) | 30 V | Through Hole | 800 mOhm | TO-220-3 | 36 nC |