TK34E10N1,S1X

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 75A TO220

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 75A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	TK34E10N1,S1X

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	103 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature	Vgs(th) (Max) @ Id	Technology	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage TK34E10N1,S1X	TO-220	10 V	20 V	150 °C	4 V	MOSFET (Metal Oxide)	N-Channel	103 W	75 A	Through Hole	38 nC	TO-220-3	9.5 mOhm	2600 pF	100 V

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General part information

N-Channel 100 V 75A (Tc) 103W (Tc) Through Hole TO-220

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