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MOSFET N-CH 100V 75A TO220
| Part | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Operating Temperature | Vgs(th) (Max) @ Id | Technology | FET Type | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TO-220 | 10 V | 20 V | 150 °C | 4 V | MOSFET (Metal Oxide) | N-Channel | 103 W | 75 A | Through Hole | 38 nC | TO-220-3 | 9.5 mOhm | 2600 pF | 100 V |