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TIP111G - onsemi-FJP5027OTU GP BJT Trans GP BJT NPN 800V 3A 50000mW 3-Pin(3+Tab) TO-220 Tube

TIP111G

Active
ON Semiconductor

TRANS DARLINGTON NPN 80V 2A 2000MW 3-PIN(3+TAB) TO-220AB TUBE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsPackage Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54PDatasheet+1
TIP111G - onsemi-FJP5027OTU GP BJT Trans GP BJT NPN 800V 3A 50000mW 3-Pin(3+Tab) TO-220 Tube

TIP111G

Active
ON Semiconductor

TRANS DARLINGTON NPN 80V 2A 2000MW 3-PIN(3+TAB) TO-220AB TUBE

Deep-Dive with AI

DocumentsPackage Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54PDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationTIP111G
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max)2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]1000 hFE
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power - Max [Max]2 W
Supplier Device PackageTO-220
Vce Saturation (Max) @ Ib, Ic [Max]2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

TIP110%20(LEGACY%20FAIRCHILD) Series

Medium Power NPN Darlington Bipolar Power Transistor

PartOperating TemperatureCurrent - Collector Cutoff (Max)Package / CasePower - Max [Max]Current - Collector (Ic) (Max) [Max]Supplier Device PackageDC Current Gain (hFE) (Min) @ Ic, Vce [Min]Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, Ic [Max]Mounting TypeVoltage - Collector Emitter Breakdown (Max) [Max]Operating Temperature [Max]Operating Temperature [Min]Transistor TypeFrequency - Transition
ON Semiconductor
TIP110TU
150 °C
2 mA
TO-220-3
2 W
2 A
TO-220-3
1000 hFE
60 V
2.5 V
Through Hole
ON Semiconductor
TIP117
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
2.5 V
Through Hole
100 V
150 °C
-65 °C
PNP - Darlington
ON Semiconductor
TIP112G
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
2.5 V
Through Hole
100 V
150 °C
-65 °C
ON Semiconductor
TIP115G
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
60 V
2.5 V
Through Hole
150 °C
-65 °C
PNP - Darlington
ON Semiconductor
TIP116
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
2.5 V
Through Hole
80 V
150 °C
-65 °C
PNP - Darlington
ON Semiconductor
TIP117G
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
2.5 V
Through Hole
100 V
150 °C
-65 °C
PNP - Darlington
ON Semiconductor
TIP116G
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
2.5 V
Through Hole
80 V
150 °C
-65 °C
PNP - Darlington
ON Semiconductor
TIP116
2 mA
TO-220-3
50 W
2 A
TO-220-3
1000 hFE
2.5 V
Through Hole
80 V
150 °C
-65 °C
PNP - Darlington
25 MHz
ON Semiconductor
TIP110
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
60 V
2.5 V
Through Hole
150 °C
-65 °C
ON Semiconductor
TIP111G
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
2.5 V
Through Hole
80 V
150 °C
-65 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 0.64
10$ 0.47
100$ 0.34
DigikeyTube 1$ 1.46
10$ 0.92
100$ 0.61
500$ 0.48
1000$ 0.44
2000$ 0.40
5000$ 0.36
10000$ 0.34
ON SemiconductorN/A 1$ 0.36

Description

General part information

TIP110%20(LEGACY%20FAIRCHILD) Series

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary devices.Replacement Active Part Number:TIP110