TIP115G

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ON Semiconductor

MEDIUM POWER NPN DARLINGTON BIPOLAR POWER TRANSISTOR

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DocumentsDatasheet Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P +1

TIP115G

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ON Semiconductor

MEDIUM POWER NPN DARLINGTON BIPOLAR POWER TRANSISTOR

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DocumentsDatasheet Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TIP115G

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max)	2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	1000 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	2 W
Supplier Device Package	TO-220
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic [Max]	2.5 V
Voltage - Collector Emitter Breakdown (Max)	60 V

TIP110%20(LEGACY%20FAIRCHILD) Series

Medium Power NPN Darlington Bipolar Power Transistor

Part	Operating Temperature	Current - Collector Cutoff (Max)	Package / Case	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Frequency - Transition
ON Semiconductor TIP110TU	150 °C	2 mA	TO-220-3	2 W	2 A	TO-220-3	1000 hFE	60 V	2.5 V	Through Hole
ON Semiconductor TIP117		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE		2.5 V	Through Hole	100 V	150 °C	-65 °C	PNP - Darlington
ON Semiconductor TIP112G		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE		2.5 V	Through Hole	100 V	150 °C	-65 °C
ON Semiconductor TIP115G		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE	60 V	2.5 V	Through Hole		150 °C	-65 °C	PNP - Darlington
ON Semiconductor TIP116		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE		2.5 V	Through Hole	80 V	150 °C	-65 °C	PNP - Darlington
ON Semiconductor TIP117G		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE		2.5 V	Through Hole	100 V	150 °C	-65 °C	PNP - Darlington
ON Semiconductor TIP116G		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE		2.5 V	Through Hole	80 V	150 °C	-65 °C	PNP - Darlington
ON Semiconductor TIP116		2 mA	TO-220-3	50 W	2 A	TO-220-3	1000 hFE		2.5 V	Through Hole	80 V	150 °C	-65 °C	PNP - Darlington	25 MHz
ON Semiconductor TIP110		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE	60 V	2.5 V	Through Hole		150 °C	-65 °C
ON Semiconductor TIP111G		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE		2.5 V	Through Hole	80 V	150 °C	-65 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.57
		10	$ 0.99
		100	$ 0.66
		500	$ 0.52
		1000	$ 0.47
		2000	$ 0.44
		5000	$ 0.39
		10000	$ 0.37
ON Semiconductor	N/A	1	$ 0.40

Description

General part information

TIP110%20(LEGACY%20FAIRCHILD) Series

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary devices.Replacement Active Part Number:TIP110

Documents

Technical documentation and resources

Datasheet

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing