
2SAR567F3TR
ActiveSMALL SIGNAL BIPOLAR TRANSISTOR, 2.5A I(C), 120V V(BR)CEO, 1-ELEMENT, PNP, SILICON, DFN2020, 3 PIN
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2SAR567F3TR
ActiveSMALL SIGNAL BIPOLAR TRANSISTOR, 2.5A I(C), 120V V(BR)CEO, 1-ELEMENT, PNP, SILICON, DFN2020, 3 PIN
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2SAR567F3TR |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2.5 A |
| Current - Collector Cutoff (Max) [Max] | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 hFE |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 3-UDFN Exposed Pad |
| Power - Max [Max] | 1 W |
| Supplier Device Package | HUML2020L3 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 200 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 120 V |
Pricing
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Description
General part information
2SAR567F3 Series
2SAR567F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.
Documents
Technical documentation and resources