2SAR567F3 Series

Small and Excellent Thermal Conductivity, PNP -2.5A -120V Middle Power Transistor

Catalog

Small and Excellent Thermal Conductivity, PNP -2.5A -120V Middle Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Operating Temperature	Mounting Type	Power - Max [Max]
Rohm Semiconductor 2SAR567F3TR	120 V	3-UDFN Exposed Pad	2.5 A	120 hFE	PNP	200 mV	1 µA	HUML2020L3	150 °C	Surface Mount	1 W

Catalog

Small and Excellent Thermal Conductivity, PNP -2.5A -120V Middle Power Transistor

Key Features

• Suitable for Middle Power Driver., Low VCE(sat)VCE(sat)=-200mV (Max.) . (IC/IB=-800mA/-80mA), High collector current. IC=-2.5A(max), ICP=-5A(max), Leadless small SMD package (HUML2020L3) Excellent thermal and electrical conductivity.

Description

2SAR567F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.