MSRTA60060A

Active

GeneSiC Semiconductor

DIODE MODULE GP 600V 600A 3TOWER

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

DIODE MODULE GP 600V 600A 3TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MSRTA60060A

Current - Average Rectified (Io) (per Diode)	600 A
Current - Reverse Leakage @ Vr	25 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Three Tower
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Three Tower
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Technology	Diode Configuration	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Speed	Current - Average Rectified (Io) (per Diode)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]
GeneSiC Semiconductor MSRTA60060A	Standard	1 Pair Common Cathode	-40 °C	175 ░C	Three Tower	25 µA	Standard Recovery >500ns	200 mA	600 A	Chassis Mount	1.2 V	Three Tower	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	25	$ 99.26

General part information

Diode Array 1 Pair Common Cathode 600 V 600A (DC) Chassis Mount Three Tower

Technical documentation and resources