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DIODE MODULE GP 600V 600A 3TOWER
| Part | Technology | Diode Configuration | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Supplier Device Package | Current - Reverse Leakage @ Vr | Speed | Speed | Current - Average Rectified (Io) (per Diode) | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Standard | 1 Pair Common Cathode | -40 °C | 175 ░C | Three Tower | 25 µA | Standard Recovery >500ns | 200 mA | 600 A | Chassis Mount | 1.2 V | Three Tower | 600 V |