MBR600100CT

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GeneSiC Semiconductor

DIODE MOD SCHOT 100V 300A 2TOWER

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GeneSiC Semiconductor

DIODE MOD SCHOT 100V 300A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR600100CT

Current - Average Rectified (Io) (per Diode)	300 A
Current - Reverse Leakage @ Vr	1 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	880 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Diode Configuration	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Technology
GeneSiC Semiconductor MBR600100CTR	100 V	Twin Tower	300 A	880 mV	Chassis Mount	200 mA 500 ns	1 Pair Common Anode	Twin Tower	150 °C	-55 °C	1 mA	Schottky
GeneSiC Semiconductor MBR600100CT	100 V	Twin Tower	300 A	880 mV	Chassis Mount	200 mA 500 ns	1 Pair Common Cathode	Twin Tower	150 °C	-55 °C	1 mA	Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	80	$ 107.87

General part information

Diode Array 1 Pair Common Cathode 100 V 300A Chassis Mount Twin Tower

Technical documentation and resources