DIODE MOD SCHOT 100V 300A 2TOWER
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Speed | Diode Configuration | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 100 V | Twin Tower | 300 A | 880 mV | Chassis Mount | 200 mA 500 ns | 1 Pair Common Anode | Twin Tower | 150 °C | -55 °C | 1 mA | Schottky |
GeneSiC Semiconductor | 100 V | Twin Tower | 300 A | 880 mV | Chassis Mount | 200 mA 500 ns | 1 Pair Common Cathode | Twin Tower | 150 °C | -55 °C | 1 mA | Schottky |