ZXMHC6A07N8TC

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Diodes Inc

60V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

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Diodes Inc

60V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

Technical Specifications

Parameters and characteristics for this part

Specification	ZXMHC6A07N8TC

Configuration	2 N and 2 P-Channel (Full Bridge)
Current - Continuous Drain (Id) @ 25°C	1.28 A, 1.39 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	3.2 nC
Input Capacitance (Ciss) (Max) @ Vds	141 pF, 166 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	870 mW
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

60V SO8 Complementary enhancement mode MOSFET H-Bridge

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Mounting Type	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]
Diodes Inc ZXMHC6A07N8TC	1.28 A 1.39 A	250 mOhm	8-SOIC	3.9 mm	0.154 in	2 N and 2 P-Channel (Full Bridge)	Surface Mount	8-SO	MOSFET (Metal Oxide)	-55 °C	150 °C	3.2 nC	3 V	60 V	Logic Level Gate	141 pF 166 pF	870 mW

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General part information

60V SO8 Complementary enhancement mode MOSFET H-Bridge

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