Catalog
60V SO8 Complementary enhancement mode MOSFET H-Bridge
Beta
⌘K
60V SO8 Complementary enhancement mode MOSFET H-Bridge
60V SO8 Complementary enhancement mode MOSFET H-Bridge
| Part | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Configuration | Mounting Type | Supplier Device Package | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 1.28 A 1.39 A | 250 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 2 N and 2 P-Channel (Full Bridge) | Surface Mount | 8-SO | MOSFET (Metal Oxide) | -55 °C | 150 °C | 3.2 nC | 3 V | 60 V | Logic Level Gate | 141 pF 166 pF | 870 mW |