1N8031-GA

Obsolete

GeneSiC Semiconductor

DIODE SIL CARBIDE 650V 1A TO276

Search across all available documentation for this part.

Obsolete

GeneSiC Semiconductor

DIODE SIL CARBIDE 650V 1A TO276

Technical Specifications

Parameters and characteristics for this part

Specification	1N8031-GA

Capacitance @ Vr, F	76 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	250 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-276AA
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-276
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr	Technology	Speed
GeneSiC Semiconductor 1N8031-GA	650 V	1 A	76 pF	0 ns	TO-276AA	-55 °C	250 °C	TO-276	Through Hole	5 µA	SiC (Silicon Carbide) Schottky	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 1A Through Hole TO-276

Technical documentation and resources