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DIODE SIL CARBIDE 650V 1A TO276
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Package / Case | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Supplier Device Package | Mounting Type | Current - Reverse Leakage @ Vr | Technology | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 650 V | 1 A | 76 pF | 0 ns | TO-276AA | -55 °C | 250 °C | TO-276 | Through Hole | 5 µA | SiC (Silicon Carbide) Schottky | No Recovery Time |