X28HC256JIZ-15T1

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Renesas Electronics Corporation

256K, 32K X 8 BIT; 5 VOLT, BYTE ALTERABLE EEPROM

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X28HC256JIZ-15T1

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Renesas Electronics Corporation

256K, 32K X 8 BIT; 5 VOLT, BYTE ALTERABLE EEPROM

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	X28HC256JIZ-15T1

Access Time	150 ns
Memory Format	EEPROM
Memory Interface	Parallel
Memory Organization	32K x 8
Memory Size	32 KB
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	32-LCC (J-Lead)
Supplier Device Package	32-PLCC
Supplier Device Package [x]	13.97
Supplier Device Package [y]	11.43
Technology	EEPROM
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	4.5 V
Write Cycle Time - Word, Page	5 ms

X28HC256 Series

256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM

Part	Memory Interface	Memory Format	Supplier Device Package	Memory Organization	Memory Size	Write Cycle Time - Word, Page	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Type	Technology	Package / Case	Package / Case [x]	Package / Case [y]	Access Time	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package [y]	Supplier Device Package [x]
Renesas Electronics Corporation X28HC256PZ-15	Parallel	EEPROM	28-PDIP	32K x 8	32 KB
Renesas Electronics Corporation X28HC256WC6721	Parallel	EEPROM		32K x 8	32 KB	5 ms	4.5 V	5.5 V	Non-Volatile	EEPROM
Renesas Electronics Corporation X28HC256SZ-12	Parallel	EEPROM	28-SOIC	32K x 8	32 KB	5 ms	4.5 V	5.5 V	Non-Volatile	EEPROM	28-SOIC	0.295 in	7.5 mm	120 ns	70 °C	0 °C	Surface Mount
Renesas Electronics Corporation X28HC256JIZ-15T1	Parallel	EEPROM	32-PLCC	32K x 8	32 KB	5 ms	4.5 V	5.5 V	Non-Volatile	EEPROM	32-LCC (J-Lead)			150 ns	85 °C	-40 °C	Surface Mount	11.43	13.97
Renesas Electronics Corporation X28HC256J-90	Parallel	EEPROM	32-PLCC	32K x 8	32 KB	5 ms	4.5 V	5.5 V	Non-Volatile	EEPROM	32-LCC (J-Lead)			90 ns	70 °C	0 °C	Surface Mount	11.43	13.97
Renesas Electronics Corporation X28HC256PZ-12	Parallel	EEPROM	28-PDIP	32K x 8	32 KB
Renesas Electronics Corporation X28HC256JI-90R5699	Parallel	EEPROM	32-PLCC	32K x 8	32 KB	5 ms	4.5 V	5.5 V	Non-Volatile	EEPROM	32-LCC (J-Lead)			90 ns	85 °C	-40 °C	Surface Mount	11.43	13.97
Renesas Electronics Corporation X28HC256JZ-15T1	Parallel	EEPROM	32-PLCC	32K x 8	32 KB	5 ms	4.5 V	5.5 V	Non-Volatile	EEPROM	32-LCC (J-Lead)			150 ns	70 °C	0 °C	Surface Mount	11.43	13.97
Renesas Electronics Corporation X28HC256SIZ-90	Parallel	EEPROM	28-SOIC	32K x 8	32 KB	5 ms	4.5 V	5.5 V	Non-Volatile	EEPROM	28-SOIC	0.295 in	7.5 mm	90 ns	85 °C	-40 °C	Surface Mount
Renesas Electronics Corporation X28HC256JI-90R5697	Parallel	EEPROM	32-PLCC	32K x 8	32 KB	5 ms	4.5 V	5.5 V	Non-Volatile	EEPROM	32-LCC (J-Lead)			90 ns	85 °C	-40 °C	Surface Mount	11.43	13.97

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	750	$ 33.64

Description

General part information

X28HC256 Series

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down. Endurance for the X28HC256 is specified as a minimum 100, 000 write cycles per byte and an inherent data retention of 100 years

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Technical documentation and resources