PJS6811_S1_00001

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Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJS6811_S1_00001

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	5.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	416 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Configuration	Package / Case	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
Panjit International Inc. PJS6811_S1_00001	5.4 nC	MOSFET (Metal Oxide)	Surface Mount	416 pF	105 mOhm	2 P-Channel	SOT-23-6	1.25 W	2.7 A	1.2 V	SOT-23-6	20 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 2.7A (Ta) 1.25W (Ta) Surface Mount SOT-23-6

Technical documentation and resources