20V P-CHANNEL ENHANCEMENT MODE M
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Configuration | Package / Case | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 5.4 nC | MOSFET (Metal Oxide) | Surface Mount | 416 pF | 105 mOhm | 2 P-Channel | SOT-23-6 | 1.25 W | 2.7 A | 1.2 V | SOT-23-6 | 20 V | -55 °C | 150 °C |