Zenode.ai Logo
Beta
K
UCLAMP3301D.TCT - ONSEMI MM3Z39VT1G

UCLAMP3301D.TCT

Active
Semtech Corporation

ESD PROTECTION DEVICE, 9.5 V, SOD-323, 2 PINS, 3.3 V, 100 W, ΜCLAMP SERIES

Deep-Dive with AI

Search across all available documentation for this part.

UCLAMP3301D.TCT - ONSEMI MM3Z39VT1G

UCLAMP3301D.TCT

Active
Semtech Corporation

ESD PROTECTION DEVICE, 9.5 V, SOD-323, 2 PINS, 3.3 V, 100 W, ΜCLAMP SERIES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationUCLAMP3301D.TCT
ApplicationsGeneral Purpose
Capacitance @ Frequency50 pF
Current - Peak Pulse (10/1000µs)10 A
Mounting TypeSurface Mount
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-55 °C
Package / CaseSOD-323, SC-76
Power - Peak Pulse100 W
Power Line ProtectionFalse
Supplier Device PackageSOD-323
TypeZener
Unidirectional Channels [custom]1
Voltage - Breakdown (Min) [Min]3.5 V
Voltage - Clamping (Max) @ Ipp [Max]9.5 V
Voltage - Reverse Standoff (Typ)3.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.76
10$ 0.66
100$ 0.45
500$ 0.38
1000$ 0.32
Digi-Reel® 1$ 0.76
10$ 0.66
100$ 0.45
500$ 0.38
1000$ 0.32
Tape & Reel (TR) 3000$ 0.29
6000$ 0.27
9000$ 0.25
30000$ 0.25
NewarkEach (Supplied on Cut Tape) 1$ 0.67
25$ 0.63
50$ 0.54
100$ 0.45
250$ 0.42
500$ 0.38
1000$ 0.34

Description

General part information

UCLAMP3301 Series

The UCLAMP3301D.TCT is a 2-pin Transient Voltage Suppressor designed to replace multilayer varistors (MLVs) in portable applications. It offers superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. It is designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT) and cable discharge events (CDE). The µClamp™ 3301D is constructed using Semtechs proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over silicon-avalanche diode processes. It features a true operating voltage of 3.3V for superior protection when compared to traditional pn junction devices. It gives the designer the flexibility to protect one line in applications where array is not practical.

Documents

Technical documentation and resources