VS-10ETS10STRLPBF

Unknown

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 10A TO263AB

Search across all available documentation for this part.

Unknown

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 10A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-10ETS10STRLPBF

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-263AB (D2PAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Current - Average Rectified (Io)	Technology	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Current - Reverse Leakage @ Vr	Package / Case	Supplier Device Package
Vishay General Semiconductor - Diodes Division VS-10ETS10SPBF	10 A	Standard	Surface Mount	1000 V	1.1 V	150 °C	-40 °C	Standard Recovery >500ns	200 mA	50 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AB (D2PAK)
Vishay General Semiconductor - Diodes Division VS-10ETS10STRLPBF	10 A	Standard	Surface Mount	1000 V	1.1 V	150 °C	-40 °C	Standard Recovery >500ns	200 mA	500 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AB (D2PAK)
Vishay General Semiconductor - Diodes Division VS-10ETS10S-M3	10 A	Standard	Surface Mount	1000 V	1.1 V	150 °C	-40 °C	Standard Recovery >500ns	200 mA	50 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AB (D2PAK)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1000 V 10A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources