DIODE GEN PURP 1KV 10A TO263AB
| Part | Current - Average Rectified (Io) | Technology | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Speed | Current - Reverse Leakage @ Vr | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 10 A | Standard | Surface Mount | 1000 V | 1.1 V | 150 °C | -40 °C | Standard Recovery >500ns | 200 mA | 50 µA | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263AB (D2PAK) |
Vishay General Semiconductor - Diodes Division | 10 A | Standard | Surface Mount | 1000 V | 1.1 V | 150 °C | -40 °C | Standard Recovery >500ns | 200 mA | 500 µA | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263AB (D2PAK) |
Vishay General Semiconductor - Diodes Division | 10 A | Standard | Surface Mount | 1000 V | 1.1 V | 150 °C | -40 °C | Standard Recovery >500ns | 200 mA | 50 µA | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263AB (D2PAK) |