TP65H050G4WS

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Transphorm

650 V 34 A GAN FET

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Active

Transphorm

650 V 34 A GAN FET

Technical Specifications

Parameters and characteristics for this part

Specification	TP65H050G4WS

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	119 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	TO-247-3
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.8 V

Part	Regulator Topology	Frequency - Switching	Supplied Contents	Power - Output	Voltage - Input	Board Type	Main Purpose	Outputs and Type	Outputs and Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
Transphorm TDINV3000W050B-KIT	Full-Bridge	50 kHz	Board(s)	3 kW	400 VDC	Fully Populated	DC/AC Inverter	Non-Isolated	1
Transphorm TP65H050G4WS										650 V	4.8 V	1000 pF	119 W	34 A	TO-247-3	-55 °C	150 °C	TO-247-3	60 mOhm	24 nC	20 V	N-Channel	GaNFET (Gallium Nitride)	10 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 34A (Tc) 119W (Tc) Through Hole TO-247-3

Technical documentation and resources