RJP65T43DPM-00#T1
ActiveRenesas Electronics Corporation
IGBT TRENCH 650V 40A TO3PFM
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RJP65T43DPM-00#T1
ActiveRenesas Electronics Corporation
IGBT TRENCH 650V 40A TO3PFM
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RJP65T43DPM-00#T1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Gate Charge | 70 nC |
| IGBT Type | Trench |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-220-3 Full Pack |
| Power - Max [Max] | 68.8 W |
| Supplier Device Package | TO-3PFM |
| Switching Energy | 110 µJ, 170 µJ |
| Td (on/off) @ 25°C | 107 ns |
| Td (on/off) @ 25°C | 30 ns |
| Test Condition | 20 A, 400 V, 15 V, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2.4 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 540 | $ 2.48 | |
Description
General part information
65T4x Series Series
The RJP65T43DPM 650V, 20A trench insulated-gate bipolar transistor (IGBT) features a 150A collector peak current, offers through hole mounting, and comes in a TO-3PFM package.
Documents
Technical documentation and resources