Catalog
IGBT 650V 20A TO-3PFM
Description
AI
The RJP65T43DPM 650V, 20A trench insulated-gate bipolar transistor (IGBT) features a 150A collector peak current, offers through hole mounting, and comes in a TO-3PFM package.
Beta
⌘K
IGBT 650V 20A TO-3PFM
IGBT 650V 20A TO-3PFM
| Part | Operating Temperature | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Current - Collector (Ic) (Max) [Max] | Mounting Type | Test Condition | Package / Case | Supplier Device Package | Switching Energy | Power - Max [Max] | Vce(on) (Max) @ Vge, Ic | Gate Charge | Td (on/off) @ 25°C | Td (on/off) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | 175 °C | 650 V | Trench | 40 A | Through Hole | 10 Ohm 15 V 20 A 400 V | TO-220-3 Full Pack | TO-3PFM | 110 µJ 170 µJ | 68.8 W | 2.4 V | 70 nC | 107 ns | 30 ns |