1N4446

Obsolete

ON Semiconductor

DIODE GEN PURP 100V 200MA DO35

Search across all available documentation for this part.

Obsolete

ON Semiconductor

DIODE GEN PURP 100V 200MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	1N4446

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	25 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-204AH (DO-35)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Reverse Recovery Time (trr)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Package / Case	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Technology
ON Semiconductor 1N4446TR	4 ns	Through Hole	1 V	Any Speed	200 mA	175 °C	4 pF	Axial DO-204AH DO-35	25 nA	200 mA	DO-35	100 V	Standard
ON Semiconductor 1N4446	4 ns	Through Hole	1 V	Any Speed	200 mA	175 °C	4 pF	Axial DO-204AH DO-35	25 nA	200 mA	DO-204AH (DO-35)	100 V	Standard
ON Semiconductor 1N4446	4 ns	Through Hole	1 V	Any Speed	200 mA	175 °C	4 pF	Axial DO-204AH DO-35	25 nA	200 mA	DO-35	100 V	Standard
ON Semiconductor 1N4446_T50R	4 ns	Through Hole	1 V	Any Speed	200 mA	175 °C	4 pF	Axial DO-204AH DO-35	25 nA	200 mA	DO-35	100 V	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 200mA Through Hole DO-204AH (DO-35)

Technical documentation and resources