1N4446 Series

Catalog

DIODE GEN PURP 100V 200MA DO35

Part	Reverse Recovery Time (trr)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Package / Case	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Technology
ON Semiconductor 1N4446TR	4 ns	Through Hole	1 V	Any Speed	200 mA	175 °C	4 pF	Axial DO-204AH DO-35	25 nA	200 mA	DO-35	100 V	Standard
ON Semiconductor 1N4446	4 ns	Through Hole	1 V	Any Speed	200 mA	175 °C	4 pF	Axial DO-204AH DO-35	25 nA	200 mA	DO-204AH (DO-35)	100 V	Standard
ON Semiconductor 1N4446	4 ns	Through Hole	1 V	Any Speed	200 mA	175 °C	4 pF	Axial DO-204AH DO-35	25 nA	200 mA	DO-35	100 V	Standard
ON Semiconductor 1N4446_T50R	4 ns	Through Hole	1 V	Any Speed	200 mA	175 °C	4 pF	Axial DO-204AH DO-35	25 nA	200 mA	DO-35	100 V	Standard