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ZXMC6A09DN8TA - 8 SO

ZXMC6A09DN8TA

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 3.9A I(D), 60V, 0.045OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC, SOP-8

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ZXMC6A09DN8TA - 8 SO

ZXMC6A09DN8TA

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 3.9A I(D), 60V, 0.045OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC, SOP-8

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Technical Specifications

Parameters and characteristics for this part

SpecificationZXMC6A09DN8TA
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C3.9 A, 3.7 A
Drain to Source Voltage (Vdss)60 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs24.2 nC
Input Capacitance (Ciss) (Max) @ Vds1580 pF, 1407 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]1.8 W
Rds On (Max) @ Id, Vgs45 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.94
10$ 1.61
100$ 1.28
Digi-Reel® 1$ 1.94
10$ 1.61
100$ 1.28
Tape & Reel (TR) 500$ 1.09
1000$ 0.92
2500$ 0.88
5000$ 0.84

Description

General part information

ZXMC6A09DN8 Series

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.