Complementary Pair Enhancement Mode MOSFET
Complementary Pair Enhancement Mode MOSFET
| Part | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Feature | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Technology | Configuration | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | Surface Mount | 3.7 A 3.9 A | 8-SO | Logic Level Gate | 60 V | 8-SOIC | 3.9 mm | 0.154 in | 1407 pF 1580 pF | -55 °C | 150 °C | 45 mOhm | 1 V | MOSFET (Metal Oxide) | N and P-Channel | 24.2 nC | 1.8 W |