SCT4018KRC15

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Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 81 A, 1.2 KV, 0.018 OHM, TO-247

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Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 81 A, 1.2 KV, 0.018 OHM, TO-247

Technical Specifications

Parameters and characteristics for this part

Specification	SCT4018KRC15

Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	170 nC
Input Capacitance (Ciss) (Max) @ Vds	4532 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	312 W
Rds On (Max) @ Id, Vgs	23.4 mOhm
Supplier Device Package	TO-247-4L
Vgs (Max) [Max]	21 V
Vgs (Max) [Min]	-4 V
Vgs(th) (Max) @ Id	4.8 V

Part	Supplied Contents	Type	Secondary Attributes	Function	Utilized IC / Part	Contents	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Rohm Semiconductor P05SCT4018KR-EVK-001	Board(s)	Power Management	On-Board LEDs	Half H-Bridge Driver (External FET)	SCT4018KR	Board(s)
Rohm Semiconductor P04SCT4018KE-EVK-001	Board(s)	Power Management	On-Board LEDs	Half H-Bridge Driver (External FET)	SCT4018KE	Board(s)
Rohm Semiconductor SCT4018KRC15							-4 V	21 V	175 °C	170 nC	312 W	TO-247-4	23.4 mOhm	Through Hole	4.8 V	4532 pF	TO-247-4L	1200 V	N-Channel	18 V

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General part information

N-Channel 1200 V 81A (Tc) 312W Through Hole TO-247-4L

Technical documentation and resources