TP65H035G4WS

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Transphorm

TO-247-3 GAN TRANSISTORS(GAN HEMT) ROHS

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Transphorm

TO-247-3 GAN TRANSISTORS(GAN HEMT) ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	TP65H035G4WS

Current - Continuous Drain (Id) @ 25°C	46.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	41 mOhm
Supplier Device Package	TO-247-3
Technology	GaNFET (Cascode Gallium Nitride FET)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.8 V

Part	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs
Transphorm TP65H035G4WS	GaNFET (Cascode Gallium Nitride FET)	Through Hole	10 V	-55 °C	150 °C	46.5 A	N-Channel	650 V	1500 pF	22 nC	156 W	20 V	4.8 V	TO-247-3	TO-247-3	41 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3

Technical documentation and resources

No documents available