GP3D020A170B

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SemiQ

DIODE SIL CARB 1.7KV 67A TO247-2

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SemiQ

DIODE SIL CARB 1.7KV 67A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	GP3D020A170B

Capacitance @ Vr, F	1403 pF
Current - Average Rectified (Io)	67 A
Current - Reverse Leakage @ Vr	80 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1700 V
Voltage - Forward (Vf) (Max) @ If	1.65 V

Part	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)	Package / Case	Diode Configuration	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Speed	Current - Average Rectified (Io)	Capacitance @ Vr, F
SemiQ GP3D020A120U	1.65 V	10 A	TO-247-3	1 Pair Common Cathode	175 ░C	-55 C	1.2 kV	TO-247-3	SiC (Silicon Carbide) Schottky	20 µA	Through Hole	No Recovery Time
SemiQ GP3D020A170B	1.65 V		TO-247-2		175 ░C	-55 C	1700 V	TO-247-2	SiC (Silicon Carbide) Schottky	80 µA	Through Hole	No Recovery Time	67 A	1403 pF
SemiQ GP3D020A120B	1.65 V		TO-247-2		175 ░C	-55 C	1.2 kV	TO-247-2	SiC (Silicon Carbide) Schottky	40 µA	Through Hole	No Recovery Time		1179 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1700 V 67A Through Hole TO-247-2

Technical documentation and resources