GP3D020A120U

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SemiQ

DIODE ARR SIC 1200V 10A TO247-3

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SemiQ

DIODE ARR SIC 1200V 10A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	GP3D020A120U

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	20 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.65 V

Part	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)	Package / Case	Diode Configuration	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Speed	Current - Average Rectified (Io)	Capacitance @ Vr, F
SemiQ GP3D020A120U	1.65 V	10 A	TO-247-3	1 Pair Common Cathode	175 ░C	-55 C	1.2 kV	TO-247-3	SiC (Silicon Carbide) Schottky	20 µA	Through Hole	No Recovery Time
SemiQ GP3D020A170B	1.65 V		TO-247-2		175 ░C	-55 C	1700 V	TO-247-2	SiC (Silicon Carbide) Schottky	80 µA	Through Hole	No Recovery Time	67 A	1403 pF
SemiQ GP3D020A120B	1.65 V		TO-247-2		175 ░C	-55 C	1.2 kV	TO-247-2	SiC (Silicon Carbide) Schottky	40 µA	Through Hole	No Recovery Time		1179 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 7.42

General part information

Diode Array 1 Pair Common Cathode 1200 V 10A Through Hole TO-247-3

Technical documentation and resources