BUJD203AD,118

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WeEn Semiconductors Co., Ltd

TRANS GP BJT NPN 425V 4A 80000MW 3-PIN(2+TAB) DPAK T/R

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WeEn Semiconductors Co., Ltd

TRANS GP BJT NPN 425V 4A 80000MW 3-PIN(2+TAB) DPAK T/R

Technical Specifications

Parameters and characteristics for this part

Specification	BUJD203AD,118

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	11
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	80 W
Supplier Device Package	DPAK
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	425 V

Part	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max)	Transistor Type	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]
WeEn Semiconductors Co., Ltd BUJD203AX,127	425 V	10	2 mA	NPN	TO-220-3 Full Pack Isolated Tab	Through Hole	4 A	TO-220F	150 °C	26 W
WeEn Semiconductors Co., Ltd BUJD203AD,118	425 V	11		NPN	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	4 A	DPAK	150 °C	80 W	100 µA

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General part information

Bipolar (BJT) Transistor NPN 425 V 4 A 80 W Surface Mount DPAK

Technical documentation and resources

No documents available