BUJD203AX,127

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WeEn Semiconductors Co., Ltd

TRANS NPN 425V 4A TO220F

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WeEn Semiconductors Co., Ltd

TRANS NPN 425V 4A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	BUJD203AX,127

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max)	2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power - Max [Max]	26 W
Supplier Device Package	TO-220F
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	425 V

Part	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max)	Transistor Type	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]
WeEn Semiconductors Co., Ltd BUJD203AX,127	425 V	10	2 mA	NPN	TO-220-3 Full Pack Isolated Tab	Through Hole	4 A	TO-220F	150 °C	26 W
WeEn Semiconductors Co., Ltd BUJD203AD,118	425 V	11		NPN	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	4 A	DPAK	150 °C	80 W	100 µA

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General part information

Bipolar (BJT) Transistor NPN 425 V 4 A 26 W Through Hole TO-220F

Technical documentation and resources

No documents available