SCT2080KEGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 40 A, 1.2 KV, 0.08 OHM, TO-247N
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SCT2080KEGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 40 A, 1.2 KV, 0.08 OHM, TO-247N
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCT2080KEGC11 |
|---|---|
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 106 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2080 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 262 W |
| Rds On (Max) @ Id, Vgs | 117 mOhm |
| Supplier Device Package | TO-247N |
| Vgs (Max) [Max] | 22 V |
| Vgs (Max) [Min] | -6 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT2080KE Series
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
Documents
Technical documentation and resources