Catalog
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET
Description
AI
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
Beta
⌘K
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) [Min] | Vgs (Max) [Max] | Vgs(th) (Max) @ Id | Package / Case | Rds On (Max) @ Id, Vgs | Supplier Device Package | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Operating Temperature | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 106 nC | -6 V | 22 V | 4 V | TO-247-3 | 117 mOhm | TO-247N | 262 W | 18 V | 1200 V | 175 °C | Through Hole | 2080 pF | N-Channel |