71V3558SA100BQGI

Obsolete

Renesas Electronics Corporation

3.3V 256K X 18 ZBT SYNCHRONOUS PIPELINED SRAM WITH 3.3V I/O

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

71V3558SA100BQGI

Obsolete

Renesas Electronics Corporation

3.3V 256K X 18 ZBT SYNCHRONOUS PIPELINED SRAM WITH 3.3V I/O

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	71V3558SA100BQGI

Access Time	5 ns
Clock Frequency	100 MHz
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	256K x 18
Memory Size	4.5 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	165-TBGA
Supplier Device Package	165-CABGA (13x15)
Technology	SRAM - Synchronous, SDR (ZBT)
Voltage - Supply [Max]	3.465 V
Voltage - Supply [Min]	3.135 V

71V3558 Series

3.3V 256K x 18 ZBT Synchronous Pipelined SRAM with 3.3V I/O

Part	Clock Frequency	Package / Case	Memory Organization	Mounting Type	Supplier Device Package	Memory Type	Memory Size	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Memory Interface	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Format	Access Time
Renesas Electronics Corporation 71V3558SA166BQG8	166 MHz	165-TBGA	256K x 18	Surface Mount	165-CABGA (13x15)	Volatile	4.5 Mbit	SRAM - Synchronous SDR (ZBT)	70 °C	0 °C	Parallel	3.465 V	3.135 V	SRAM
Renesas Electronics Corporation 71V3558S133PFGI	133 MHz	100-LQFP	256K x 18	Surface Mount	100-TQFP (14x14)	Volatile	4.5 Mbit	SRAM - Synchronous SDR (ZBT)	85 °C	-40 °C	Parallel	3.465 V	3.135 V	SRAM	4.2 ns
Renesas Electronics Corporation 71V3558SA100BQGI	100 MHz	165-TBGA	256K x 18	Surface Mount	165-CABGA (13x15)	Volatile	4.5 Mbit	SRAM - Synchronous SDR (ZBT)	85 °C	-40 °C	Parallel	3.465 V	3.135 V	SRAM	5 ns
Renesas Electronics Corporation 71V3558S133PFG	133 MHz	100-LQFP	256K x 18	Surface Mount	100-TQFP (14x14)	Volatile	4.5 Mbit	SRAM - Synchronous SDR (ZBT)	70 °C	0 °C	Parallel	3.465 V	3.135 V	SRAM	4.2 ns
Renesas Electronics Corporation 71V3558S133PFGI8	133 MHz	100-LQFP	256K x 18	Surface Mount	100-TQFP (14x14)	Volatile	4.5 Mbit	SRAM - Synchronous SDR (ZBT)	85 °C	-40 °C	Parallel	3.465 V	3.135 V	SRAM	4.2 ns
Renesas Electronics Corporation 71V3558S100PFG8	100 MHz	100-LQFP	256K x 18	Surface Mount	100-TQFP (14x14)	Volatile	4.5 Mbit	SRAM - Synchronous SDR (ZBT)	70 °C	0 °C	Parallel	3.465 V	3.135 V	SRAM	5 ns
Renesas Electronics Corporation 71V3558SA166BQGI8	166 MHz	165-TBGA	256K x 18	Surface Mount	165-CABGA (13x15)	Volatile	4.5 Mbit	SRAM - Synchronous SDR (ZBT)	85 °C	-40 °C	Parallel	3.465 V	3.135 V	SRAM
Renesas Electronics Corporation 71V3558S133PFG8	133 MHz	100-LQFP	256K x 18	Surface Mount	100-TQFP (14x14)	Volatile	4.5 Mbit	SRAM - Synchronous SDR (ZBT)	70 °C	0 °C	Parallel	3.465 V	3.135 V	SRAM	4.2 ns
Renesas Electronics Corporation 71V3558SA133BQG	133 MHz	165-TBGA	256K x 18	Surface Mount	165-CABGA (13x15)	Volatile	4.5 Mbit	SRAM - Synchronous SDR (ZBT)	70 °C	0 °C	Parallel	3.465 V	3.135 V	SRAM	4.2 ns
Renesas Electronics Corporation 71V3558SA100BQG8	100 MHz	165-TBGA	256K x 18	Surface Mount	165-CABGA (13x15)	Volatile	4.5 Mbit	SRAM - Synchronous SDR (ZBT)	70 °C	0 °C	Parallel	3.465 V	3.135 V	SRAM	5 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

71V3558 Series

The 71V3558 3.3V CMOS synchronous SRAM, organized as 256K x 18, is designed to eliminate dead bus cycles when turning the bus around between reads and writes or writes and reads. Thus, it has been given the name ZBT™, or Zero Bus Turnaround. The 71V3558 contains data I/O, address, and control signal registers.

Documents

Technical documentation and resources