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71V3558S133PFGI - 100-TQFP

71V3558S133PFGI

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Renesas Electronics Corporation

3.3V 256K X 18 ZBT SYNCHRONOUS PIPELINED SRAM WITH 3.3V I/O

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71V3558S133PFGI - 100-TQFP

71V3558S133PFGI

Active
Renesas Electronics Corporation

3.3V 256K X 18 ZBT SYNCHRONOUS PIPELINED SRAM WITH 3.3V I/O

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification71V3558S133PFGI
Access Time4.2 ns
Clock Frequency133 MHz
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization256K x 18
Memory Size4.5 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case100-LQFP
Supplier Device Package100-TQFP (14x14)
TechnologySRAM - Synchronous, SDR (ZBT)
Voltage - Supply [Max]3.465 V
Voltage - Supply [Min]3.135 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 33$ 9.37
Tray 144$ 9.93

Description

General part information

71V3558 Series

The 71V3558 3.3V CMOS synchronous SRAM, organized as 256K x 18, is designed to eliminate dead bus cycles when turning the bus around between reads and writes or writes and reads. Thus, it has been given the name ZBT™, or Zero Bus Turnaround. The 71V3558 contains data I/O, address, and control signal registers.

Documents

Technical documentation and resources