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BYV32E-300PQ - WNS40100CQ

BYV32E-300PQ

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WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 300V 10A TO-220E

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BYV32E-300PQ - WNS40100CQ

BYV32E-300PQ

Active
WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 300V 10A TO-220E

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYV32E-300PQ
Current - Average Rectified (Io) (per Diode)10 A
Current - Reverse Leakage @ Vr20 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 °C
Package / CaseTO-220-3
Reverse Recovery Time (trr)35 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220E
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]300 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 6000$ 0.49

Description

General part information

BYV32 Series

Diode Array 1 Pair Common Cathode 300 V 10A Through Hole TO-220-3

Documents

Technical documentation and resources

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