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BYV32E-100,127 - TO-220-3

BYV32E-100,127

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WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 100V 20A TO220AB

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BYV32E-100,127 - TO-220-3

BYV32E-100,127

Active
WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 100V 20A TO220AB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYV32E-100,127
Current - Average Rectified (Io) (per Diode)20 A
Current - Reverse Leakage @ Vr30 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction150 °C
Package / CaseTO-220-3
Reverse Recovery Time (trr)25 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220AB
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If1.15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 556$ 0.54
Tube 6000$ 0.49

Description

General part information

BYV32 Series

Diode Array 1 Pair Common Cathode 100 V 20A Through Hole TO-220-3

Documents

Technical documentation and resources

No documents available