
TIL113300W
ObsoleteON Semiconductor
OPTOISO 5.3KV DARL W/BASE 6DIP
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TIL113300W
ObsoleteON Semiconductor
OPTOISO 5.3KV DARL W/BASE 6DIP
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | TIL113300W |
|---|---|
| Current - DC Forward (If) (Max) [Max] | 100 mA |
| Current Transfer Ratio (Min) [Min] | 300 % |
| Input Type | DC |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Operating Temperature [Max] | 100 °C |
| Operating Temperature [Min] | -55 °C |
| Output Type | Darlington with Base |
| Package / Case | 6-DIP |
| Package / Case | 10.16 mm |
| Package / Case | 10.16 mm |
| Supplier Device Package | 6-DIP |
| Turn On / Turn Off Time (Typ) | 350 ns, 55 µs |
| Vce Saturation (Max) [Max] | 1.25 V |
| Voltage - Isolation | 5300 Vrms |
| Voltage - Output (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
TIL113M Series
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Documents
Technical documentation and resources