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TIL113300W - 6-DIP

TIL113300W

Obsolete
ON Semiconductor

OPTOISO 5.3KV DARL W/BASE 6DIP

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TIL113300W - 6-DIP

TIL113300W

Obsolete
ON Semiconductor

OPTOISO 5.3KV DARL W/BASE 6DIP

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationTIL113300W
Current - DC Forward (If) (Max) [Max]100 mA
Current Transfer Ratio (Min) [Min]300 %
Input TypeDC
Mounting TypeThrough Hole
Number of Channels1
Operating Temperature [Max]100 °C
Operating Temperature [Min]-55 °C
Output TypeDarlington with Base
Package / Case6-DIP
Package / Case10.16 mm
Package / Case10.16 mm
Supplier Device Package6-DIP
Turn On / Turn Off Time (Typ)350 ns, 55 µs
Vce Saturation (Max) [Max]1.25 V
Voltage - Isolation5300 Vrms
Voltage - Output (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

TIL113M Series

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

Documents

Technical documentation and resources