SCS220AE2HRC11

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Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 650 V, 20 A, 15 NC, TO-247

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DocumentsNotes for Temperature Measurement Using Thermocouples How to Use the Thermal Resistance and Thermal Characteristics Parameters +33

SCS220AE2HRC11

Active

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 650 V, 20 A, 15 NC, TO-247

Deep-Dive with AI

DocumentsNotes for Temperature Measurement Using Thermocouples How to Use the Thermal Resistance and Thermal Characteristics Parameters +33

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Technical Specifications

Parameters and characteristics for this part

Specification	SCS220AE2HRC11

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction	175 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247N
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.55 V

SCS220AE2HR Series

1200V, 20A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive

Part	Diode Configuration	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Speed	Operating Temperature - Junction	Capacitance @ Vr, F	Qualification	Grade
Rohm Semiconductor SCS220AE2C	1 Pair Common Cathode	1.55 V	175 °C	10 A	200 µA	TO-247	SiC (Silicon Carbide) Schottky	650 V	Through Hole	TO-247-3	No Recovery Time
Rohm Semiconductor SCS220KE2HRC11	1 Pair Common Cathode	1.6 V		10 A	200 µA	TO-247N	SiC (Silicon Carbide) Schottky	1.2 kV	Through Hole	TO-247-3	No Recovery Time	175 °C
Rohm Semiconductor SCS220AE2GC11	1 Pair Common Cathode	1.55 V		10 A	200 µA	TO-247N	SiC (Silicon Carbide) Schottky	650 V	Through Hole	TO-247-3	No Recovery Time	175 °C
Rohm Semiconductor SCS220AGHRC		1.55 V	175 °C		400 µA	TO-220AC	SiC (Silicon Carbide) Schottky	650 V	Through Hole	TO-220-2	No Recovery Time		730 pF	AEC-Q101	Automotive
Rohm Semiconductor SCS220AE2HRC11	1 Pair Common Cathode	1.55 V		10 A	200 µA	TO-247N	SiC (Silicon Carbide) Schottky	650 V	Through Hole	TO-247-3	No Recovery Time	175 °C
Rohm Semiconductor SCS220KGHRC		1.6 V	175 °C		400 µA	TO-220AC	SiC (Silicon Carbide) Schottky	1.2 kV	Through Hole	TO-220-2	No Recovery Time		1060 pF	AEC-Q101	Automotive
Rohm Semiconductor SCS220AJHRTLL		1.55 V	175 °C		400 µA		SiC (Silicon Carbide) Schottky	650 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	No Recovery Time		730 pF	AEC-Q101	Automotive
Rohm Semiconductor SCS220AMC		1.55 V	175 °C		400 µA	TO-220FM	SiC (Silicon Carbide) Schottky	650 V	Through Hole	TO-220-2 Full Pack	No Recovery Time		730 pF
Rohm Semiconductor SCS220KE2GC11	1 Pair Common Cathode	1.6 V		10 A	200 µA	TO-247N	SiC (Silicon Carbide) Schottky	1.2 kV	Through Hole	TO-247-3	No Recovery Time	175 °C