SCS220AMC

LTB

Rohm Semiconductor

DIODE SIL CARB 650V 20A TO220FM

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DocumentsTO-220FM Taping Spec SiC Flammability

SCS220AMC

LTB

Rohm Semiconductor

DIODE SIL CARB 650V 20A TO220FM

Deep-Dive with AI

DocumentsTO-220FM Taping Spec SiC Flammability

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCS220AMC

Capacitance @ Vr, F	730 pF
Current - Reverse Leakage @ Vr	400 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220FM
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.55 V

SCS220AE2HR Series

1200V, 20A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive

Part	Diode Configuration	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Speed	Operating Temperature - Junction	Capacitance @ Vr, F	Qualification	Grade
Rohm Semiconductor SCS220AE2C	1 Pair Common Cathode	1.55 V	175 °C	10 A	200 µA	TO-247	SiC (Silicon Carbide) Schottky	650 V	Through Hole	TO-247-3	No Recovery Time
Rohm Semiconductor SCS220KE2HRC11	1 Pair Common Cathode	1.6 V		10 A	200 µA	TO-247N	SiC (Silicon Carbide) Schottky	1.2 kV	Through Hole	TO-247-3	No Recovery Time	175 °C
Rohm Semiconductor SCS220AE2GC11	1 Pair Common Cathode	1.55 V		10 A	200 µA	TO-247N	SiC (Silicon Carbide) Schottky	650 V	Through Hole	TO-247-3	No Recovery Time	175 °C
Rohm Semiconductor SCS220AGHRC		1.55 V	175 °C		400 µA	TO-220AC	SiC (Silicon Carbide) Schottky	650 V	Through Hole	TO-220-2	No Recovery Time		730 pF	AEC-Q101	Automotive
Rohm Semiconductor SCS220AE2HRC11	1 Pair Common Cathode	1.55 V		10 A	200 µA	TO-247N	SiC (Silicon Carbide) Schottky	650 V	Through Hole	TO-247-3	No Recovery Time	175 °C
Rohm Semiconductor SCS220KGHRC		1.6 V	175 °C		400 µA	TO-220AC	SiC (Silicon Carbide) Schottky	1.2 kV	Through Hole	TO-220-2	No Recovery Time		1060 pF	AEC-Q101	Automotive
Rohm Semiconductor SCS220AJHRTLL		1.55 V	175 °C		400 µA		SiC (Silicon Carbide) Schottky	650 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	No Recovery Time		730 pF	AEC-Q101	Automotive
Rohm Semiconductor SCS220AMC		1.55 V	175 °C		400 µA	TO-220FM	SiC (Silicon Carbide) Schottky	650 V	Through Hole	TO-220-2 Full Pack	No Recovery Time		730 pF
Rohm Semiconductor SCS220KE2GC11	1 Pair Common Cathode	1.6 V		10 A	200 µA	TO-247N	SiC (Silicon Carbide) Schottky	1.2 kV	Through Hole	TO-247-3	No Recovery Time	175 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.65

Description

General part information

SCS220AE2HR Series

Switching loss reduced, enabling high-speed switching . (3-pin package)

Documents

Technical documentation and resources

TO-220FM Taping Spec

Datasheet