TK3R1E04PL,S1X

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 100A TO220

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 100A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	TK3R1E04PL,S1X

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63.4 nC
Input Capacitance (Ciss) (Max) @ Vds	4670 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-220-3
Power Dissipation (Max)	87 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	FET Type	Power Dissipation (Max)	Operating Temperature
Toshiba Semiconductor and Storage TK3R1E04PL,S1X	4670 pF	4.5 V 10 V	100 A	40 V	Through Hole	MOSFET (Metal Oxide)	63.4 nC	20 V	2.4 V	3.8 mOhm	TO-220-3	TO-220	N-Channel	87 W	175 °C

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General part information

N-Channel 40 V 100A (Tc) 87W (Tc) Through Hole TO-220

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