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MOSFET N-CH 40V 100A TO220
| Part | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Mounting Type | Technology | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Package / Case | Supplier Device Package | FET Type | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 4670 pF | 4.5 V 10 V | 100 A | 40 V | Through Hole | MOSFET (Metal Oxide) | 63.4 nC | 20 V | 2.4 V | 3.8 mOhm | TO-220-3 | TO-220 | N-Channel | 87 W | 175 °C |