ZXMHC3F381N8TC

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Diodes Inc

30V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

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Diodes Inc

30V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

Technical Specifications

Parameters and characteristics for this part

Specification	ZXMHC3F381N8TC

Configuration	2 N and 2 P-Channel (Full Bridge)
Current - Continuous Drain (Id) @ 25°C	3.36 A, 3.98 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	9 nC
Input Capacitance (Ciss) (Max) @ Vds	430 pF, 670 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	870 mW
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

30V SO8 Complementary enhancement mode MOSFET H-Bridge

Part	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Rds On (Max) @ Id, Vgs	Mounting Type	Power - Max [Max]	FET Feature	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology
Diodes Inc ZXMHC3F381N8TC	9 nC	3.36 A 3.98 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	2 N and 2 P-Channel (Full Bridge)	33 mOhm	Surface Mount	870 mW	Logic Level Gate	30 V	8-SO	430 pF 670 pF	3 V	MOSFET (Metal Oxide)

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General part information

This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.