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30V SO8 Complementary enhancement mode MOSFET H-Bridge
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This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.
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30V SO8 Complementary enhancement mode MOSFET H-Bridge
30V SO8 Complementary enhancement mode MOSFET H-Bridge
| Part | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Configuration | Rds On (Max) @ Id, Vgs | Mounting Type | Power - Max [Max] | FET Feature | Drain to Source Voltage (Vdss) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 9 nC | 3.36 A 3.98 A | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in | 2 N and 2 P-Channel (Full Bridge) | 33 mOhm | Surface Mount | 870 mW | Logic Level Gate | 30 V | 8-SO | 430 pF 670 pF | 3 V | MOSFET (Metal Oxide) |